DocumentCode :
2711696
Title :
4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC
Author :
Darwish, A.M. ; Boutros, K. ; Luo, B. ; Huebschman, B. ; Viveiros, E. ; Hung, H.A.
Author_Institution :
Army Res. Lab., Adelphi, MD
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
730
Lastpage :
733
Abstract :
A broadband Ka-band AlGaN/GaN on SiC HEMT power amplifier MMIC was developed for millimeter-wave antenna applications. The output stage is composed of a 1.2-mm-wide device with 0.18 mum gate length. The two-stage 50-ohm matched MMIC produces 13plusmn1 dB of gain from 26 GHz to 36 GHz. At 35 GHz, the measured CW saturated output power was 4 W, indicating a power density of 3.3 W/mm. The power added efficiency was 23%. Across the band, the measured CW output power was > 2 W. While individual (or partially matched single stage) devices have been demonstrated with good output power, to the best of our knowledge, this is the first report of a 10 GHz-bandwidth Ka-band GaN MMIC with high output power, gain, and return loss
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; carbon compounds; gallium compounds; integrated circuit design; millimetre wave integrated circuits; millimetre wave power amplifiers; nitrogen; silicon compounds; wide band gap semiconductors; 0.18 micron; 10 GHz; 26 to 36 GHz; 4 W; AlGaN-GaN; HEMT power amplifier; Ka-band; MMIC power amplifier; millimeter-wave antenna applications; Aluminum gallium nitride; Broadband amplifiers; Broadband antennas; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power generation; Power measurement; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249737
Filename :
4015008
Link To Document :
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