DocumentCode
2711732
Title
400kHz, 300W SiC BJT Based High Power Density PFC Converter
Author
Xiaojun Xu ; Huang, Alex Q. ; Yan Gao ; Zhong Du ; Agarwal, Abhishek ; Krishnaswami, S.
Author_Institution
Semiconductor Power Electronics Center (SPEC), North Carolina State University, Raleigh, NC 27695, Email: xxu2@ncsu.edu
fYear
2006
fDate
18-22 June 2006
Firstpage
1
Lastpage
5
Abstract
SiC BJT is a very promising switching power device because of its ability to operate at high temperature. This capability, coupled with ultra low conduction and switching loss, will facilitate very high frequency operation. This will have a significant impact on applications such as PFC where power density is of high interest. In this paper, an all SiC PFC is designed and implemented. In order to achieve ultra low loss, a new drive method is implemented that uses a conventional MOSFET driver to drive the SiC BJT. Based on this method, the turn on and turn off loss of the SiC device can be reduced significantly. Based on the measured loss, the maximum operating frequency of the PFC converter is predicted. Experimental demonstration at 400kHz and 300W is presented in this paper.
Keywords
Electronic equipment testing; Frequency conversion; MOSFET circuits; Power semiconductor switches; Rectifiers; Schottky diodes; Silicon carbide; Switching converters; Switching loss; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE
ISSN
0275-9306
Print_ISBN
0-7803-9716-9
Type
conf
DOI
10.1109/PESC.2006.1711888
Filename
1711888
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