• DocumentCode
    2711732
  • Title

    400kHz, 300W SiC BJT Based High Power Density PFC Converter

  • Author

    Xiaojun Xu ; Huang, Alex Q. ; Yan Gao ; Zhong Du ; Agarwal, Abhishek ; Krishnaswami, S.

  • Author_Institution
    Semiconductor Power Electronics Center (SPEC), North Carolina State University, Raleigh, NC 27695, Email: xxu2@ncsu.edu
  • fYear
    2006
  • fDate
    18-22 June 2006
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    SiC BJT is a very promising switching power device because of its ability to operate at high temperature. This capability, coupled with ultra low conduction and switching loss, will facilitate very high frequency operation. This will have a significant impact on applications such as PFC where power density is of high interest. In this paper, an all SiC PFC is designed and implemented. In order to achieve ultra low loss, a new drive method is implemented that uses a conventional MOSFET driver to drive the SiC BJT. Based on this method, the turn on and turn off loss of the SiC device can be reduced significantly. Based on the measured loss, the maximum operating frequency of the PFC converter is predicted. Experimental demonstration at 400kHz and 300W is presented in this paper.
  • Keywords
    Electronic equipment testing; Frequency conversion; MOSFET circuits; Power semiconductor switches; Rectifiers; Schottky diodes; Silicon carbide; Switching converters; Switching loss; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-9716-9
  • Type

    conf

  • DOI
    10.1109/PESC.2006.1711888
  • Filename
    1711888