Title :
W-Band Oscillator on Metamorphic HEMT
Author :
Kirby, P.L. ; Herrick, K. ; Alm, R. ; Luque, N.A. ; Rodriguez, A. ; Dunleavy, L.P. ; Papapolymerou, J.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
We present for the first time an un-buffered W-band oscillator on a metamorphic HEMT GaAs substrate. The oscillator has an output power of +1.5 dBm and a phase noise of -101 dBc/Hz at a 1 MHz offset. This oscillator will be part of an integrated monolithic front end
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; gallium arsenide; integrated circuit design; millimetre wave oscillators; wide band gap semiconductors; W-band oscillator; integrated monolithic front end; metamorphic HEMT; millimeter wave; Acoustic reflection; FETs; Frequency; Gallium arsenide; Indium phosphide; Microwave oscillators; Phase noise; Power generation; Substrates; mHEMTs; HEMT; Metamorphic HEMT; Oscillator; front end; millimeter wave;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249757
