• DocumentCode
    2711818
  • Title

    Automated extraction of matching parameters for bipolar transistor technologies

  • Author

    Connor, S.D. ; Evanson, D.

  • Author_Institution
    Microelectron. Centre, GEC Plessey Semicond. Ltd., Hollinwood, UK
  • fYear
    1996
  • fDate
    25-28 Mar 1996
  • Firstpage
    33
  • Lastpage
    38
  • Abstract
    We present here a technique for automatically producing statistical data for bias and resistor mis-match on bipolar transistor technologies by use of a nulled differential amplifier. The method has been developed to enable automatic wafer probe and the generation of distributions and wafer maps. The data is analysed using software from the SAS Institute and the method allows extraction of both resistor and VBE mis-match from a single circuit
  • Keywords
    bipolar transistors; differential amplifiers; automated measurement; bias mismatch; bipolar transistor; matching parameters; nulled differential amplifier; resistor mismatch; software; statistical data; wafer map; wafer probe; Bipolar transistors; Circuits; Electron emission; Gain measurement; Microelectronics; Resistors; Semiconductor materials; Tail; Virtual manufacturing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
  • Conference_Location
    Trento
  • Print_ISBN
    0-7803-2783-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.1996.535618
  • Filename
    535618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2711818