Title :
Automated extraction of matching parameters for bipolar transistor technologies
Author :
Connor, S.D. ; Evanson, D.
Author_Institution :
Microelectron. Centre, GEC Plessey Semicond. Ltd., Hollinwood, UK
Abstract :
We present here a technique for automatically producing statistical data for bias and resistor mis-match on bipolar transistor technologies by use of a nulled differential amplifier. The method has been developed to enable automatic wafer probe and the generation of distributions and wafer maps. The data is analysed using software from the SAS Institute and the method allows extraction of both resistor and VBE mis-match from a single circuit
Keywords :
bipolar transistors; differential amplifiers; automated measurement; bias mismatch; bipolar transistor; matching parameters; nulled differential amplifier; resistor mismatch; software; statistical data; wafer map; wafer probe; Bipolar transistors; Circuits; Electron emission; Gain measurement; Microelectronics; Resistors; Semiconductor materials; Tail; Virtual manufacturing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535618
