Title :
Imaging above 1 THz limit with Si-MOSFET detectors
Author :
Schuster, F. ; Videlier, H. ; Sakowicz, M. ; Teppe, F. ; Coquillat, D. ; Dupont, B. ; Siligaris, A. ; Dussopt, L. ; Giffard, B. ; Knap, W.
Author_Institution :
Univ. Montpellier 2, Montpellier, France
Abstract :
We demonstrate that a proper antenna and transistor design can provide high responsivity for Terahertz radiation and imaging capability even above the 1 THz limit with a low-cost 130 nm CMOS technology. This result opens the way to CMOS THz imagers working at high frequencies and therefore exhibiting high a spatial resolution - down to ~300 μm.
Keywords :
CMOS image sensors; MOSFET; antennas; elemental semiconductors; silicon; terahertz wave imaging; CMOS technology; MOSFET detector; Si; antenna design; size 130 nm; terahertz imaging; terahertz radiation; transistor design; Antennas; CMOS integrated circuits; Detectors; FETs; Imaging; Logic gates; Noise;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612547
