Test structure to measure the gate-drain coupling capacitor using accelerated techniques

In this paper, we present a test structure to measure the gate-drain coupling capacitance. The test structure has been implemented within a standard CMOS process. The structure uses charge coupling as a means to measure the gate-drain capacitance. Furthermore, the test structure can measure the gate-drain capacitance is less that 10 ms. The basic structure consists of two MOS transistors connected by their gates