An improved test structure to characterize ultra-low hot carrier injection in homogeneous conditions

Author

Selmi, Luca ; Bez, Roberto ; Sangiorgi, Enrico

Author_Institution

Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

fYear

1996

fDate

25-28 Mar 1996

Firstpage

83

Lastpage

86

Abstract

This paper describes an improved test structure to characterize homogeneous hot-carrier injection from silicon to silicon dioxide at very low applied voltages. The device allows to separate the interface and oxide trapped charges from the total charge injected through the interface. Results on the injection probability of substrate hot holes are presented, covering an extended range of bias conditions with respect to previous reports

Keywords

elemental semiconductors; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO₂; charge injection probability; homogeneous hot-carrier injection; interface trapped charge; oxide trapped charge; substrate hot holes; test structure; ultra-low voltage; Current measurement; Electron traps; Hot carrier effects; Hot carrier injection; Hot carriers; Integrated circuit modeling; Low voltage; Silicon; Substrate hot electron injection; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535625

Filename

535625