Title :
An improved test structure to characterize ultra-low hot carrier injection in homogeneous conditions
Author :
Selmi, Luca ; Bez, Roberto ; Sangiorgi, Enrico
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
This paper describes an improved test structure to characterize homogeneous hot-carrier injection from silicon to silicon dioxide at very low applied voltages. The device allows to separate the interface and oxide trapped charges from the total charge injected through the interface. Results on the injection probability of substrate hot holes are presented, covering an extended range of bias conditions with respect to previous reports
Keywords :
elemental semiconductors; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; charge injection probability; homogeneous hot-carrier injection; interface trapped charge; oxide trapped charge; substrate hot holes; test structure; ultra-low voltage; Current measurement; Electron traps; Hot carrier effects; Hot carrier injection; Hot carriers; Integrated circuit modeling; Low voltage; Silicon; Substrate hot electron injection; Testing;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535625
