Title :
0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC
Author :
Nishikawa, Kenjiro ; Enoki, Takatomo ; Sugitani, Suehiro ; Toyoda, Ichihiko
Author_Institution :
NTT Network Innovation Labs., NTT Corp., Yokosuka
Abstract :
This paper demonstrates the low-power operation of an InP HEMT V-band low-noise amplifier (LNA) MMIC. The device used here is a commercial 0.1-mum InP HEMT developed for high-speed digital ICs. The fabricated two-stage LNA MMIC, chip size of 0.9 mm2, employs two 50-mum gate-width InP HEMTs and coplanar waveguides. Under 0.4 V supply voltage operation, the MMIC achieves a noise figure of 2.86 dB at 60 GHz with an associated gain of 12.3 dB. The power dissipation of the MMIC was only 5.6 mW. The input IP3 was - 9 dBm at 60 GHz. A 3-dB bandwidth of 44.6 GHz to 67.2 GHz was also achieved. These results indicate the InP HEMT technology has a great potential for the low-voltage and low-power ICs that are needed for future millimeter-wave high-speed wireless applications
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; low noise amplifiers; low-power electronics; millimetre wave amplifiers; 0.1 micron; 0.4 V; 12.3 dB; 2.86 dB; 44.6 to 67.2 GHz; 5.6 mW; 50 micron; HEMT MMIC; InP; LNA MMIC; MMIC low-noise amplifier; V-band MMIC; coplanar waveguides; digital integrated circuit; low-power integrated circuit; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave technology; Noise figure; Power dissipation; Voltage; InP HEMT; MMIC; coplanar; low-noise amplifier; low-power; millimeter-wave;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249796
