Title :
ESD characterization of planar InGaAs devices
Author :
Ji, Z. ; Linten, D. ; Boschke, R. ; Hellings, G. ; Chen, S.H. ; Alian, A. ; Zhou, D. ; Mols, Y. ; Ivanov, T. ; Franco, J. ; Kaczer, B. ; Zhang, X. ; Gao, R. ; Zhang, J.F. ; Zhang, W. ; Collaert, N. ; Groeseneken, G.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
Abstract :
We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In0.53Ga0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through independent mechanisms: transient Ef-lowering induced pre-existing e-traps discharging in the gate stack and hot hole induced e-traps generation through impact ionization in the InP buffer. These two types of traps explain the observed walk-out of off-state channel leakage current as well as the two-stage current conduction phenomena in the TLP measurement. The generated e-traps are permanent and can introduce detrimental conduction current harmful to the device performance. By properly selecting the buffer material, these defects can be removed.
Keywords :
III-V semiconductors; MOSFET; electron traps; electrostatic discharge; gallium arsenide; impact ionisation; indium compounds; semiconductor device reliability; ESD characterization; ESD reliability; ESD stress; In0.53Ga0.47As; TLP measurement; detrimental conduction current; gate stack; hot hole induced e-trap generation; impact ionization; off-state channel leakage current; planar nMOSFET device; transient Ef-lowering induced pre-existing e-traps; two-stage current conduction phenomena; Current measurement; Delays; Electrostatic discharges; Integrated circuits; Stress; Stress measurement; Transient analysis; ESD; Electron trapping; HEMT; III-V; InGaAs; Reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112719
