ESD characterization of planar InGaAs devices

Author

Ji, Z. ; Linten, D. ; Boschke, R. ; Hellings, G. ; Chen, S.H. ; Alian, A. ; Zhou, D. ; Mols, Y. ; Ivanov, T. ; Franco, J. ; Kaczer, B. ; Zhang, X. ; Gao, R. ; Zhang, J.F. ; Zhang, W. ; Collaert, N. ; Groeseneken, G.

Author_Institution

Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK

fYear

2015

fDate

19-23 April 2015

Abstract

We present a comprehensive study of ESD reliability (TLP) on planar nMOSFETs with In_0.53Ga_0.47As as the channel material. Two types of traps are found during ESD stress. They are formed through independent mechanisms: transient Ef-lowering induced pre-existing e-traps discharging in the gate stack and hot hole induced e-traps generation through impact ionization in the InP buffer. These two types of traps explain the observed walk-out of off-state channel leakage current as well as the two-stage current conduction phenomena in the TLP measurement. The generated e-traps are permanent and can introduce detrimental conduction current harmful to the device performance. By properly selecting the buffer material, these defects can be removed.

Keywords

III-V semiconductors; MOSFET; electron traps; electrostatic discharge; gallium arsenide; impact ionisation; indium compounds; semiconductor device reliability; ESD characterization; ESD reliability; ESD stress; In_0.53Ga_0.47As; TLP measurement; detrimental conduction current; gate stack; hot hole induced e-trap generation; impact ionization; off-state channel leakage current; planar nMOSFET device; transient Ef-lowering induced pre-existing e-traps; two-stage current conduction phenomena; Current measurement; Delays; Electrostatic discharges; Integrated circuits; Stress; Stress measurement; Transient analysis; ESD; Electron trapping; HEMT; III-V; InGaAs; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112719

Filename

7112719