Title :
The problem of the creation stable p-n junctions with help the methods of relaxed optics in InSb and InAs
Author :
Trokhimchuck, Petro P.
Author_Institution :
Dept. of the Theor. & Math. Phys., Lesya Ukrayinka´´s Volyn State Univ., Lutsk, Ukraine
Abstract :
The basic problems of the receiving p-n junctions in ion implanted Mg+/InSb after CO2-laser irradiation and in p-InSb and p-InAs after ruby laser irradiation are represented. Proper volt-ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. A basic cause of the difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for ruby laser irradiation and "damage"-absorption for CO2-laser irradiation).
Keywords :
III-V semiconductors; indium compounds; infrared spectra; laser beam effects; laser materials processing; magnesium; p-n junctions; CO2-laser irradiation; InAs; InSb:Mg+; ion implantation; irreversible interaction light; p-n junctions; ruby laser irradiation; volt-ampere characteristics; Biomedical optical imaging; Impurities; Infrared spectra; Laser modes; Laser stability; Laser theory; Modems; P-n junctions; Physics; Semiconductor lasers;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN :
0-7803-9130-6
DOI :
10.1109/CAOL.2005.1553879
