Title :
Self-heating and its implications on hot carrier reliability evaluations
Author :
Mittl, Steven ; Guarin, Fernando
Author_Institution :
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
Abstract :
Device level Self-Heating (SH) is becoming a limiting factor during traditional DC Hot Carrier stresses in bulk and SOI technologies. Consideration is given to device layout and design for Self-Heating minimization during HCI stress in SOI technologies, the effect of SH on activation energy (Ea) and the SH induced enhancement to degradation. Applying a methodology for SH temperature correction of extracted device lifetime, correlation is established between DC device level stress and AC device stress using a specially designed ring oscillator.
Keywords :
MOSFET; heating; hot carriers; integrated circuit reliability; silicon-on-insulator; DC hot carrier stress reliability evaluations; SH induced enhancement; SH temperature correction; SOI technology; activation energy; bulk FinFET technology; device design; device layout; device level self-heating minimization; device lifetime extraction; limiting factor; ring oscillator; silicon-on-insulator; Degradation; Human computer interaction; Logic gates; Ring oscillators; Stress; Temperature distribution; Temperature measurement; Activation Energy; FINFET; Hot Carriers; SOI; Self-Heating;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112726
