Title :
Light Emission and Detection for Si Photonics
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
Abstract :
The present paper reviews the current status of light emission and detection for Si Photonics. To control the initial and final stages, strain engineering of bandgap and resonator structures are indispensable for light emission. A new non-thermal approach to reduce reverse leakage current is proposed controlling the electric field strength. These together with modulation reported recently on Ge platform clearly indicates that Ge is one of the most important materials as far as active components are concerned.
Keywords :
CMOS integrated circuits; elemental semiconductors; energy gap; germanium; integrated optics; leakage currents; light emitting diodes; photodiodes; silicon; Ge; Si; bandgap; electric field strength; light detection; light emission; resonator structures; reverse leakage current reduction; silicon light emitter; silicon photonics; CMOS technology; Capacitive sensors; Cooling; Erbium; Light emitting diodes; Optical control; Photonic band gap; Potential well; Strain control; Tensile strain;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781298
