Title :
Device Analysis of Linearity in RF Power Devices by Harmonic Balance Device Simulation
Author :
Tornblad, Olof ; Ma, Gordon ; Dutton, Robert W.
Author_Institution :
Infineon Technol., North America Corp., Morgan Hill, CA
Abstract :
Low distortion is one of the most important concerns for current and next-generation wireless communication systems. In this work, the linearity of RF power MOS devices are analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) were investigated and interpreted in terms of bias and device design parameters. The demonstrated methodology helps in laying ground-work for improved device design and investigation of new device concepts for improved linearity
Keywords :
3G mobile communication; UHF field effect transistors; UHF power amplifiers; power MOSFET; 2.1 GHz; 45 W; IM3; RF power MOS linearity; harmonic balance device simulation; intermodulation distortion product; power MOSFET; Analytical models; Circuit simulation; Circuit testing; Doping; Drives; Harmonic analysis; Linearity; North America; Power system harmonics; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249829
