A High Efficiency Indirect Matrix Converter Utilizing RB-IGBTs

Author

Friedli, Thomas ; Heldwein, Marcelo L. ; Giezendanner, Florian ; Kolar, Johann Walter

Author_Institution

Power Electron. Syst. Laboratory, ETH Zurich

fYear

2006

fDate

18-22 June 2006

Firstpage

1

Lastpage

7

Abstract

This paper presents the design and construction of an indirect matrix converter (IMC) utilizing newly available IGBTs with reverse voltage blocking capability (RB-IGBTs). The design process involves the characterization of the RB-IGBTs by measuring the on-state parameters and the switching behavior in the rectifier stage of an IMC topology. Based on analytical equations the semiconductor losses are calculated and are used to perform the thermal design and simulation of the cooling system. Experimental measurements demonstrate that the designed IMC is capable of generating sinusoidal input and output currents and that the RB-IGBTs ensure low rectifier stage conduction losses and/or high IMC power conversion efficiency

Keywords

insulated gate bipolar transistors; matrix convertors; rectifiers; switching convertors; RB-IGBT; cooling system; indirect matrix converter; rectifier switching; reverse voltage blocking capability; semiconductor losses; Analytical models; Cooling; Equations; Insulated gate bipolar transistors; Matrix converters; Performance analysis; Process design; Rectifiers; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

Conference_Location

Jeju

ISSN

0275-9306

Print_ISBN

0-7803-9716-9

Type

conf

DOI

10.1109/PESC.2006.1711936

Filename

1711936