Title :
Effect of Nitrogen on Indium Segregation in GaInNAs/GaAs Quantum Wells
Author :
Dixit, V. ; Liu, H.F. ; Xiang, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A kinetic model has been developed to study the effect of nitrogen on indium segregation for GaInNAs/GaAs quantum wells. Our results suggest that nitrogen tends to enhance the indium-gallium exchange process. The incorporation of nitrogen is found to increases the segregation length up to a maximum value, which decreases with further increase in nitrogen concentration.
Keywords :
III-V semiconductors; chemical exchanges; gallium arsenide; gallium compounds; impurities; indium compounds; semiconductor quantum wells; surface segregation; GaInNAs-GaAs; indium segregation; indium-gallium exchange process; kinetic model; nitrogen concentration; quantum wells; Energy barrier; Gallium arsenide; Indium; Kinetic theory; Molecular beam epitaxial growth; Nitrogen; Optical materials; Quantum computing; Semiconductor process modeling; Substrates;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781311
