Title :
Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing
Author :
Hongpinyo, V. ; Ding, Y.H. ; Dimas, C.E. ; Wang, Y. ; Ooi, B.S. ; Qiu, W. ; Goddard, L.L. ; Behymer, E.M. ; Cole, G.D. ; Bond, T.C.
Author_Institution :
Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA
Abstract :
The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800degC which is below activation temperature.
Keywords :
III-V semiconductors; annealing; gallium arsenide; high-temperature effects; indium compounds; photoluminescence; semiconductor quantum wells; IFVD; InGaAs-GaAs; high temperature annealing; impurity free induced disordering technique; intermixing activation energy; multiple cycle annealing; photoluminescence signal degradation; quantum well intermixing method; temperature 800 degC; Annealing; Degradation; Gallium arsenide; Impurities; Indium gallium arsenide; Optical films; Optical materials; Photoluminescence; Plasma temperature; Quantum computing;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781312
