Title :
Gigabit transmitter/receiver GaAs IC chip set for optical communications
Author :
Yamashita, H. ; Ohtsuka, T. ; Yamaguchi, K. ; Kawai, M. ; Naitou, H. ; Onodera, H. ; Nakayama, Y. ; Yamaguchi, N.
Author_Institution :
Fujitsu Lab. Ltd., Kawasaki, Japan
Abstract :
The authors discuss gigabit transmitter/receiver GaAs ICs for optical communications, focusing on their circuit design architecture and performance. The key technologies for the gigabit transmitter/receiver ICs are discussed and a design architecture for them based on these key technologies is proposed. This architecture is applied to fabricate transmitter/receiver ICs (high-sensitivity preamplifier IC and high-power laser diode driver IC) using a high-transconductance MESFET process. These GaAs ICs have been successfully applied to a 2.4-Gb/s transmitter receiver, which has demonstrated good performance with a minimum average received optical power -31.8 dBm.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital communication systems; driver circuits; field effect integrated circuits; gallium arsenide; optical communication equipment; preamplifiers; receivers; semiconductor junction lasers; transmitters; 2.4 Gbit/s; GaAs; IC chip set; III-V-semiconductors; circuit design architecture; digital transmission; gigabit transmitter/receiver ICs; high-power laser diode driver; high-sensitivity preamplifier; high-transconductance MESFET process; monolithic circuits; optical communications; Circuit synthesis; Diode lasers; Driver circuits; Gallium arsenide; MESFET integrated circuits; Optical fiber communication; Optical receivers; Optical transmitters; Photonic integrated circuits; Preamplifiers;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
DOI :
10.1109/ISCAS.1988.15539
