Title :
In-N co-doped P-type ZnO films electrical prepared by modified ion beam enhanced deposition
Author :
Jinhua, Li ; Daohua, Zhao ; Yan, Wang ; Meng, Zhao ; Weifeng, Zheng ; Ningyi, Yuan
Author_Institution :
Dept of Electr. & Electron. Eng., Jiangsu Polytech. Univ., Changzhou
Abstract :
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times1020/cm3 after annealing at 600degC for 30 min, respectively.
Keywords :
Hall effect; II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; carrier density; carrier mobility; electrical resistivity; indium compounds; ion beam assisted deposition; semiconductor doping; semiconductor thin films; silicon compounds; wide band gap semiconductors; zinc compounds; AFM; Hall effect measurement; IBED method; SiO2; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; ZnO:InN; annealing process; atomic force microscopy; carrier concentration; carrier mobility; co-doped P-type film preparation; film electrical properties; film optical properties; film structure characterisation; glass substrate; modified ion beam enhanced deposition; polycrystalline film; sheet resistivity; temperature 600 degC; time 30 min; Annealing; Conductivity; Glass; Ion beams; Optical films; Particle beam optics; Substrates; Testing; X-ray scattering; Zinc oxide;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781316
