Title :
Bandgap-Engineered Broadband Stimulated Emission in Semiconductor Quantum Dash Interband Laser
Author :
Djie, H.S. ; Tan, C.L. ; Dimas, C.E. ; Hongpingyo, V. ; Ding, Y.H. ; Ooi, B.S.
Author_Institution :
Center for Opt. Technol. & Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Authors demonstrate the generation of broadband stimulated emission in the postgrowth wavelength tuned InAs/InAlGaAs quantum-dash (Qdash) laser grown on InP substrate. The laser exhibits room temperature lasing wavelength coverage of up to 50 nm at center wavelength of ~1.57 mum. Despite the bandgap blue-shift of ~70 nm after Qdash intermixing process, the laser exhibits a broadband signature of lasing linewidth, which is comparable to the as-grown laser. The integrity of the material is retained after intermixing, suggesting its potential application in the fabrication of monolitically-integrated ultra-broadband semiconductor Qdash laser.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; integrated optics; monolithic integrated circuits; quantum dash lasers; quantum well lasers; spectral line breadth; spectral line shift; stimulated emission; InAs-InAlGaAs; InP; Qdash intermixing process; bandgap blue-shift; bandgap-engineered broadband stimulated emission; lasing linewidth; monolithically-integrated ultrabroadband semiconductor Qdash laser; postgrowth wavelength tuned Qdash laser; room temperature lasing wavelength; semiconductor quantum dash interband laser; temperature 293 K to 298 K; wavelength 50 nm; Indium phosphide; Laser tuning; Optical materials; Photonic band gap; Quantum dots; Semiconductor lasers; Semiconductor materials; Stimulated emission; Substrates; Temperature;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781321
