Title :
Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device
Author :
Darabi, E. ; Ahmadi, V. ; Mirabbaszadeh, K.
Abstract :
A physical model for the analysis of dynamic response of a voltage- tunable optoelectronic integrated device is outlined. The device is composed of an integrated quantum well heterojunction phototransistor (HPT) over a quantum well laser diode. The quantum well structure Hamiltonian is numerically solved by transfer matrix method to obtain the electron and hole subband energy levels taking in to account the valence band mixing effect and strain. In order to calculate the electroabsorption coefficient, the exciton equation is solved numerically in momentum space using the Gaussian quadrature method. Based on the model the device has two operation modes: amplification for small optical feedback coefficient and switching for higher values.
Keywords :
electroabsorption; excitons; integrated optics; integrated optoelectronics; optical feedback; optical switches; phototransistors; quantum well lasers; transfer function matrices; valence bands; Gaussian quadrature method; amplification; dynamic response; electroabsorption coefficient; electron subband energy levels; exciton equation; functional quantum structure; heterojunction phototransistor; hole subband energy levels; integrated quantum well HPT; momentum space; optical feedback coefficient; optoelectronic integrated device; quantum well laser diode; quantum well structure Hamiltonian; strain effect; switching; transfer matrix method; valence band mixing effect; voltage tunable quantum structure; Capacitive sensors; Charge carrier processes; Diode lasers; Energy states; Equations; Excitons; Heterojunctions; Phototransistors; Tunable circuits and devices; Voltage;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN :
0-7803-9130-6
DOI :
10.1109/CAOL.2005.1553902
