DocumentCode :
2712687
Title :
The electromigration behavior of copper pillars for different current directions and pillar shapes
Author :
Hau-Riege, Christine ; YouWen Yau ; Caffey, Kevin ; Kumar, Rajneesh ; YangYang Sun ; Bao, Andy ; Shah, Milind ; Zhao, Lily ; Bchir, Omar ; Syed, Ahmer ; Bezuk, Steve
Author_Institution :
Quality & Reliability, Qualcomm Inc., San Diego, CA, USA
fYear :
2015
fDate :
19-23 April 2015
Abstract :
A significant asymmetry in electromigration behavior was observed for copper pillars depending on the electron current direction; the electromigration performance is very robust for an electron source at the die-side, but vulnerable to the opposite electron flow direction. Through extensive failure analysis, it was observed that die-side electron source leads to a stable layering of intermetallic compounds and no electromigration-induced voiding, while the substrate-side electron source leads to more extensive transformation into intermetallic compounds at the expense of the copper trace as well as electromigration-induced voiding. These phenomena were exacerbated by narrower trace widths but improved by an oblong pillar shape. Further, the presence of a nickel cap between the solder and pillar did not significantly impact electromigration lifetime.
Keywords :
copper; electromigration; electron sources; failure analysis; flip-chip devices; solders; Cu; copper pillar; die-side electron source; electromigration-induced voiding; electron current direction; electron flow direction; failure analysis; flip chip; intermetallic compound; nickel cap; oblong pillar shape; solder; substrate-side electron source; Copper; Current density; Electromigration; Nickel; Resistance; Robustness; Substrates; chip package interaction; copper pillar; electromigration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IRPS.2015.7112750
Filename :
7112750
Link To Document :
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