Title :
1.3μm Quantum Dot Self-Aligned Stripe Laser
Author :
Groom, K.M. ; Assamoi, P.J. ; Hugues, M. ; Roberts, J.S. ; Stevens, B.J. ; Childs, D.T.D. ; Alexander, R.R. ; Hopkinson, M. ; Hogg, R.A.
Author_Institution :
Dept. of Electron.&Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
We demonstrate, for the first time, the application of a manufacturable self-aligned stripe technique to quantum dot lasers emitting at 1.3 mum. Opto-electronic confinement provided by an InGaP layer results in single lateral mode emission.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beams; laser modes; optoelectronic devices; quantum dot lasers; semiconductor quantum dots; InGaP; opto-electronic confinement; quantum dot laser; self-aligned stripe technique; single lateral mode emission; wavelength 1.3 mum; Carrier confinement; Gallium arsenide; Indium phosphide; Laser modes; Manufacturing; Optical device fabrication; Quantum dot lasers; Radiative recombination; Substrates; Surface emitting lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781323
