• DocumentCode
    2712716
  • Title

    Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems

  • Author

    El Moutaouakil, A. ; Suemitsu, T. ; Otsuji, T. ; Coquillat, D. ; Knap, W.

  • Author_Institution
    Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron-mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ~125 V/W and ~10-11 W/Hz0.5 for ~0.30THz radiation.
  • Keywords
    high electron mobility transistors; terahertz wave detectors; InAlAs; InAlAs/InGaAs/InP high-electron-mobility transistors; InAlAs/InGaAs/InP material systems; InGaAs; InP; high-electron-mobility transistor structure; nonresonant terahertz detection; rectification mechanism; room temperature terahertz detection; temperature 293 K to 298 K; two-dimensional plasmons; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; MODFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612598
  • Filename
    5612598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2712716