DocumentCode :
2712716
Title :
Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP material systems
Author :
El Moutaouakil, A. ; Suemitsu, T. ; Otsuji, T. ; Coquillat, D. ; Knap, W.
Author_Institution :
Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron-mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ~125 V/W and ~10-11 W/Hz0.5 for ~0.30THz radiation.
Keywords :
high electron mobility transistors; terahertz wave detectors; InAlAs; InAlAs/InGaAs/InP high-electron-mobility transistors; InAlAs/InGaAs/InP material systems; InGaAs; InP; high-electron-mobility transistor structure; nonresonant terahertz detection; rectification mechanism; room temperature terahertz detection; temperature 293 K to 298 K; two-dimensional plasmons; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612598
Filename :
5612598
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2712716
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