Title :
Quantum Confine Stark Effect Suppressed Nanorod Structure Light Emitting Diode
Author :
Chen, Liang-Yi ; Wang, Cheng-Yin ; Chen, Cheng-Pin ; Cheng, Yun-Wei ; Ke, Min-Yung ; Huang, JianJang
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
Abstract :
We present a practical process to fabricate InGaN/GaN multiple-quantum-well nanorod structure. The nanorod light emitting diode array is realized by using monolayer silica nano-particle as nano-mask to define nanorod structure and a space layer to prevent p-type contact from connecting n-type GaN. The quantum confine stark effect is suppressed in nanorod device which is proved by electroluminescence peak wavelength of nanorod LEDs. These peaks of nanorod LEDs are nearly constant at an injection current between 25 mA and 100 mA.
Keywords :
III-V semiconductors; electroluminescence; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; nanofabrication; nanoparticles; nanophotonics; optical fabrication; optical materials; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; silicon compounds; InGaN-GaN; current 25 mA to 100 mA; electroluminescence; injection current; monolayer silica nanoparticles; multiple-quantum-well nanorod structure; nanomask; nanorod LED device; nanorod light emitting diode array; quantum confined stark effect suppression; Gallium nitride; Joining processes; Light emitting diodes; Nanoscale devices; Nanostructures; Optical arrays; Potential well; Quantum well devices; Silicon compounds; Stark effect;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781332
