Title :
SRAM Vmax stability considerations
Author :
Burnett, D. ; Balasubramanian, S. ; Joshi, V. ; Parihar, S. ; Higman, J. ; Weintraub, C.
Author_Institution :
Global Memory Solutions, GLOBALFOUNDRIES Inc., Austin, TX, USA
Abstract :
The voltage overdrive of SRAM cells is shown to be of concern as the stability at Vmax can be worse than at Vmin. The Vmax stability is especially sensitive to high resistances on single devices in the bitcell. Highlighted in this paper are SRAM Vmax stability issues observed in a 28nm technology as well as the increased susceptibility of FinFET SRAM cells for voltage overdrive issues.
Keywords :
MOSFET; SRAM chips; circuit stability; FinFET SRAM cell; SRAM Vmax stability; size 28 nm; voltage overdrive; FinFETs; High definition video; Resistance; SRAM cells; Stability analysis; Thermal stability; BTI; FinFET; SRAM; Vmax; Vmin; dynamic voltage; overdrive; reliability; resistance;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112760
