Title :
Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes
Author :
Tansu, Nelson ; Zhao, Hongping ; Arif, Ronald A. ; Ee, Yik-Khoon ; Liu, Guangyu ; Li, Xiaohang ; Huang, G.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
Novel InGaN-based active regions with improved momentum matrix element were investigated for achieving improved gain and radiative recombination rate. Staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs demonstrated improvement in radiative recombination rate and optical gain for green spectral regime, and these active regions have the potential to be implemented for high-efficiency green light emitting diodes and lasers.
Keywords :
III-V semiconductors; cathodoluminescence; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; semiconductor lasers; semiconductor quantum wells; spontaneous emission; InGaN; InGaN-GaNAs; cathodoluminescence; green spectral regime; high-efficiency green light emitting diodes; low-threshold diode lasers; momentum matrix element; nanostructures; optical gain; radiative recombination rate; spontaneous emission recombination; staggered quantum wells; type-II quantum wells; Biomedical optical imaging; Charge carrier density; Diode lasers; Gallium nitride; Light emitting diodes; Nanostructures; Optical polarization; Piezoelectric polarization; Radiative recombination; Stimulated emission;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781335
