A study of device performance on the effects of integrating photodiode onto CMOS technology

Author

Zoolfakar, A.S. ; Ibrahim, Ziadora ; Zakaria, A.

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia

Volume

2

fYear

2009

fDate

4-6 Oct. 2009

Firstpage

877

Lastpage

880

Abstract

The execution of this research is to investigate the effects of integrating photodiode onto 0.5 Â¿m and 0.35 Â¿m CMOS process technology. The research was carried out by using SILVACO software tool. The device performance and electrical properties are observed and analyzed. It can be conclude that the integration of photodiode onto CMOS technology resulted detrimental effect to the electrical characteristic of the device. However, the negative effect can be resolved by optimizing the threshold voltage adjust implantation module. On the contrary, the existence of photodiode resulted in a constructive manner for the breakdown voltage of NMOS technology.

Keywords

CMOS integrated circuits; electric breakdown; electric properties; electronic engineering computing; photodiodes; software tools; CMOS technology; NMOS technology; SILVACO software tool; breakdown voltage; device performance; electrical characteristic; electrical property; integrating photodiode; size 0.35 micron; size 0.5 micron; threshold voltage adjust implantation module; CMOS process; CMOS technology; Electric variables; Fabrication; Industrial electronics; MOS devices; Photodiodes; Semiconductor device modeling; Thermal factors; Threshold voltage; breakdown voltage; photodiode and gate oxide thickness; saturation current; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics & Applications, 2009. ISIEA 2009. IEEE Symposium on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-4681-0

Electronic_ISBN

978-1-4244-4683-4

Type

conf

DOI

10.1109/ISIEA.2009.5356347

Filename

5356347