• DocumentCode
    2712938
  • Title

    A new method to determine effective channel length, series resistance and threshold voltage

  • Author

    Sasaki, Makoto ; Ito, Hiroshi ; Horiuchi, Tadahiko

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1996
  • fDate
    25-28 Mar 1996
  • Firstpage
    139
  • Lastpage
    144
  • Abstract
    This paper describes a new method to determine the parameters of MOSFETs with deep-submicron channel length. The model shows that threshold voltage defined by Id/√(gm)-Vg plot is consistent with the extracted effective channel length and series resistance. The experimental data show good linearity for the parameter extraction down to a 0.24 μm transistor. The model is also found to be in good agreement for reproducing Id-Vg curves
  • Keywords
    MOSFET; semiconductor device models; 0.24 micron; I-V characteristics; deep-submicron MOSFET; effective channel length; linearity; model; parameter extraction; series resistance; threshold voltage; Data mining; Electric resistance; Equations; Indium tin oxide; Laboratories; MOSFET circuits; National electric code; Parameter extraction; Threshold voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
  • Conference_Location
    Trento
  • Print_ISBN
    0-7803-2783-7
  • Type

    conf

  • DOI
    10.1109/ICMTS.1996.535635
  • Filename
    535635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2712938