DocumentCode :
2712980
Title :
High voltage pulse power implementation using IGBT stacks
Author :
Jong-Hyun Kim ; Myung-Hyo Ryu ; Byung-Duk Min ; Ju-Won Baek ; Jong-Soo Kim ; Geun-Hie Rim
Author_Institution :
Korea Electrotechnology Research Institute (KERI), Industry Application Research Laboratory, P.O. Box 20, Changwon, 641-120, Korea, Email: kimjh@keri.re.kr
fYear :
2006
fDate :
18-22 June 2006
Firstpage :
1
Lastpage :
5
Abstract :
High voltage pulse power implementation using IGBT stacks is proposed in this paper. High voltage pulse power implementation uses Marx circuit as the main circuit. The Marx circuit is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. Diode stacks and inductor are used to charge high voltage capacitor of each stage without power loss, These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed pulse power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental and simulated results are included to verify the system performances in this paper.
Keywords :
Capacitors; Inductors; Insulated gate bipolar transistors; Power generation; Power semiconductor switches; Pulse circuits; Pulse generation; Semiconductor diodes; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE
ISSN :
0275-9306
Print_ISBN :
0-7803-9716-9
Type :
conf
DOI :
10.1109/PESC.2006.1711971
Filename :
1711971
Link To Document :
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