Title :
Solid 5-bit attenuator for 1-12 GHz band
Author :
Demchenko, A.I. ; Ignatenko, A.S. ; Kovalenko, A.F. ; Pavlyuchik, A.A. ; Shulenkov, A.S.
Author_Institution :
Minsk R&D Inst. of Radiomaterials, Belarus
Abstract :
This paper describes the development of a monolithic GaAs 5 bit digital 1-12 GHz attenuator with minimum attenuation step of 0.5 dB. This broadband MMIC uses MESFETs in the passive mode as variable resistors, their drain-source resistance varied using the gate voltage.
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; attenuators; field effect MMIC; gallium arsenide; integrated circuit design; 0.5 dB; 1 to 12 GHz; 5 bit; GaAs; UHF attenuators; broadband MMIC; gate voltage controlled MESFET drain-source resistance; microwave attenuators; minimum attenuation steps; monolithic GaAs digital attenuators; passive mode MESFET variable resistors; Attenuation; Attenuators; Gallium arsenide; MESFET integrated circuits; Microwave Theory and Techniques Society; Microwave antennas; Microwave technology; Phased arrays; Solids; Transmitting antennas;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137180
