Title :
Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures
Author :
Suzuki, Safumi ; Teranishi, Atsushi ; Asada, Masahiro ; Sugiyama, Hiroki ; Yokoyama, Haruki
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Technol., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We obtained increase in oscillation frequency of resonant tunneling diodes (RTDs) using graded emitter and thin barriers for reduced transit and tunneling times. The fundamental oscillation frequency of 1.04 THz was achieved with this structure. The dependence of output power on oscillation frequency is also shown. The output power was around 10 μW in 0.9-1 THz region.
Keywords :
oscillations; resonant tunnelling diodes; frequency 1.04 THz; fundamental oscillation frequency; graded emitter structures; resonant tunneling diode; thin barrier; Current density; Delay; Oscillators; Power generation; Resonant frequency; Time frequency analysis; Tunneling;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612616
