Title :
Measurements of THz emission from nanometric-size transistors
Author :
Nouvel, P. ; Torres, J. ; Marinchio, H. ; Laurent, T. ; Blin, S. ; Chusseau, L. ; Palerm, C. ; Varani, L. ; Shiktorov, P. ; Starikov, E. ; Gruzhinskis, V. ; Teppe, F. ; Coquillat, D.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; plasma waves; terahertz waves; AlGaAs; InGaAs; InP; THz emission measurements; high electron mobility transistors; nanometric-size transistors; optical beating; plasma wave excitation; temperature 200 K; temperature 300 K; terahertz resonant emission; Frequency measurement; HEMTs; Logic gates; MODFETs; Optical variables measurement; Plasmas; Resonant frequency;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612617
