Title :
Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors
Author :
Dyakonova, N. ; Fatimy, A.E. ; Meziani, Y. ; Otsuji, T. ; Coquillat, D. ; Knap, Wojciech ; Teppe, F. ; Vandenbrouk, S. ; Madjour, K. ; Theron, D. ; Gaquiere, C. ; Poisson, M.A. ; Delage, S.
Author_Institution :
GES, Univ. Montpellier 2, Montpellier, France
Abstract :
We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; terahertz waves; AlGaN-GaN; emission frequency; gate voltage; high electron mobility transistors; terahertz radiation; tunable room temperature THz emission; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasma temperature; Plasma waves;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612620
