Title :
Spontaneous emission from GaN/AlGaN based terahertz quantum cascade laser structure grown on GaN substrate
Author :
Terashima, W. ; Hira, H.
Author_Institution :
Terahertz-wave Res. Program, RIKEN, Sendai, Japan
Abstract :
We fabricated Nitrides-based THz-QCL structure grown on GaN substrate. The Output power for QCL on GaN substrate showed ten times higher value than that of QCL on MOCVD-GaN template. We for the first time observed THz spontaneous emission spectrum on the Nitrides-based THz-QCL on injection current.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; microwave photonics; optical fabrication; quantum cascade lasers; semiconductor growth; spontaneous emission; wide band gap semiconductors; GaN; GaN substrate; GaN-AlGaN; MOCVD; THz spontaneous emission spectrum; injection current; terahertz quantum cascade laser structure; Aluminum gallium nitride; Gallium nitride; Periodic structures; Power generation; Quantum cascade lasers; Radiation effects; Substrates;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612624
