DocumentCode :
2713454
Title :
Microstructure of Si/SiO2 nanocomposite films
Author :
Teodorescu, V.S. ; Ciurea, M.L. ; Iancu, V. ; Blanchin, M.G.
Author_Institution :
National Inst. of Mater. Phys., Bucharest, Romania
Volume :
1
fYear :
2004
fDate :
4-6 Oct. 2004
Lastpage :
62
Abstract :
The paper presents the micro structure of the Si/SiO2 nanocomposite films prepared by co-sputtering from Si and SiO2 targets. High resolution transmission electron microscopy and electron diffraction were used to reveal and compare the structures with different silicon/oxygen (SiOx, 01.6 areas. Percolation limits between the Si crystallites was observed, in the x=1 areas. The morphology of the Si nanocrystallites and the amorphous SiO2 zones were compared in regions with different composition.
Keywords :
amorphous semiconductors; crystal microstructure; crystal morphology; crystallites; electron diffraction; nanocomposites; semiconductor thin films; silicon compounds; sputtering; transmission electron microscopy; Si nanocrystallites; Si-SiO2; amorphous SiO2 zones; co-sputtering; crystal morphology; electron diffraction; nanocomposite film microstructure; transmission electron microscopy; Amorphous materials; Atmosphere; Crystallization; Microstructure; Morphology; Semiconductor films; Silicon; Sputtering; Substrates; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
Type :
conf
DOI :
10.1109/SMICND.2004.1402802
Filename :
1402802
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2713454
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