Title :
Heating due to bias in GaAs MESFETs
Author :
Tellez, J Rodriguez ; Clarke, RW
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
Abstract :
Liquid crystals are employed to measure the average temperature of GaAs MESFETs under a wide range of bias conditions. The measurements are performed to determine whether localised heat spots are formed and whether the self bias heating is the main mechanism responsible for negative output conductance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; GaAs MESFET; liquid crystal; localised heat spots; negative output conductance; self bias heating; temperature measurement; Bonding; Fingers; Gallium arsenide; Heating; Liquid crystal devices; Liquid crystals; MESFETs; Performance evaluation; Temperature distribution; Temperature measurement;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535638
