Title :
Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs
Author :
Xu, D.W. ; Yoon, S.F. ; Tong, C.Z. ; Fan, W.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
A self-consistent model comprising rate equations and thermal conduction equation is used to analyze the influence of oxide aperture on thermal properties and output power of 1.3 mum InAs-GaAs quantum-dot (QD) vertical cavity surface emitting lasers (VCSELs). The results show the self-heating effect in QD VCSEL is very sensitive to the size of oxide aperture. The temperature increase at the active region of QD VCSEL is analyzed as the function of the size of oxide aperture. The highest power 3.6 mW can be achieved by modifying the diameter of aperture. It has been demonstrated that there exists an optimized size of oxide aperture for the highest output power.
Keywords :
III-V semiconductors; gallium compounds; heat conduction; indium compounds; laser beams; quantum dot lasers; surface emitting lasers; thermal properties; InAs-GaAs; QD VCSEL; oxide aperture influence; power 3.6 mW; quantum-dot vertical cavity surface emitting laser active region; self-heating effect; thermal conduction equation; wavelength 1.3 mum; Apertures; Equations; Laser modes; Power generation; Power lasers; Quantum dots; Surface emitting lasers; Temperature sensors; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781367
