Title :
Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP
Author :
Chitrashekaraiah, Sunil ; Van Tuyen Vo ; Rezazadeh, Ali A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Manchester Univ.
Abstract :
This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this data. For the first time the conventional T-topology is extended to predict temperature behavior based on the linear expressions. Excellent agreement between measured and simulated data was observed
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; IC-CAP; InGaP-GaAs; T-topology; double heterojunction bipolar transistors; equivalent circuits; linear approximation; linear expressions; semiconductor device modeling; simple linear temperature; small signal model; temperature behavior prediction; thermal factors; Double heterojunction bipolar transistors; Electromagnetic modeling; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Physics; Signal design; Temperature dependence; Equivalent Circuits; Heterojunction bipolar transistors; Linear approximation; Semiconductor device modeling; Thermal factors;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249953
