• DocumentCode
    271358
  • Title

    Comparative Study of a Single Inverter Bridge for Dual-Frequency Induction Heating Using Si and SiC MOSFETs

  • Author

    Esteve, Vicente ; Jordán, José ; Sanchis-Kilders, Esteban ; Dede, Enrique J. ; Maset, Enrique ; Ejea, Juan B. ; Ferreres, Agustin

  • Author_Institution
    Dept. of Electron. Eng., Univ. de Valencia, Valencia, Spain
  • Volume
    62
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    1440
  • Lastpage
    1450
  • Abstract
    The induction surface hardening of parts with nonuniform cylindrical shape requires a multifrequency process in order to obtain a uniform surface hardened depth. This paper presents an induction heating high power supply composed by a single inverter circuit and a specially designed output resonant circuit. The whole circuit supplies simultaneously both medium- and high-frequency power signals to the heating inductor. An initial study is made to select the most appropriated topology for this application. The resonant output circuit is analyzed, and a design procedure is presented. The selected inverter operation is described and simulated. Simulations are experimentally verified on a 10-kW dual-frequency resonant inverter operating at 10 and 100 kHz using MOSFETs of silicon (Si) and silicon carbide (SiC) technology. A comparative study is presented based on the measurements of power losses and the energy efficiency of the inverter using both types of MOSFETs.
  • Keywords
    MOSFET; bridge circuits; elemental semiconductors; induction heating; resonant invertors; silicon; silicon compounds; surface hardening; wide band gap semiconductors; MOSFET; Si; SiC; dual-frequency induction heating; dual-frequency resonant inverter; energy efficiency; frequency 10 kHz; frequency 100 kHz; high-frequency power signal; medium-frequency power signal; multifrequency process; nonuniform cylindrical shape; power 10 kW; power loss measurement; power supply; resonant output circuit; single inverter bridge circuit; uniform surface hardened depth; Electromagnetic heating; Inductors; Inverters; RLC circuits; Resonant frequency; Topology; Induction heating; resonant power conversion; silicon carbide (SiC) MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.2014.2359411
  • Filename
    6905767