Title :
Comparative Study of a Single Inverter Bridge for Dual-Frequency Induction Heating Using Si and SiC MOSFETs
Author :
Esteve, Vicente ; JordaÌn, JoseÌ ; Sanchis-Kilders, Esteban ; Dede, Enrique J. ; Maset, Enrique ; Ejea, Juan B. ; Ferreres, Agustin
Author_Institution :
Dept. of Electron. Eng., Univ. de Valencia, Valencia, Spain
Abstract :
The induction surface hardening of parts with nonuniform cylindrical shape requires a multifrequency process in order to obtain a uniform surface hardened depth. This paper presents an induction heating high power supply composed by a single inverter circuit and a specially designed output resonant circuit. The whole circuit supplies simultaneously both medium- and high-frequency power signals to the heating inductor. An initial study is made to select the most appropriated topology for this application. The resonant output circuit is analyzed, and a design procedure is presented. The selected inverter operation is described and simulated. Simulations are experimentally verified on a 10-kW dual-frequency resonant inverter operating at 10 and 100 kHz using MOSFETs of silicon (Si) and silicon carbide (SiC) technology. A comparative study is presented based on the measurements of power losses and the energy efficiency of the inverter using both types of MOSFETs.
Keywords :
MOSFET; bridge circuits; elemental semiconductors; induction heating; resonant invertors; silicon; silicon compounds; surface hardening; wide band gap semiconductors; MOSFET; Si; SiC; dual-frequency induction heating; dual-frequency resonant inverter; energy efficiency; frequency 10 kHz; frequency 100 kHz; high-frequency power signal; medium-frequency power signal; multifrequency process; nonuniform cylindrical shape; power 10 kW; power loss measurement; power supply; resonant output circuit; single inverter bridge circuit; uniform surface hardened depth; Electromagnetic heating; Inductors; Inverters; RLC circuits; Resonant frequency; Topology; Induction heating; resonant power conversion; silicon carbide (SiC) MOSFETs;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.2014.2359411