Title :
A Reliable Low Gate Bias Model Extraction Procedure for AlGaN/GaN HEMTs
Author :
Chen, G. ; Kumar, V. ; Schwindt, R. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL
Abstract :
A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; equivalent circuits; extracted parasitic components; high gate voltage; low gate bias model extraction; microwave devices; parasitic inductance; parasitic resistance; Aluminum gallium nitride; Circuit noise; Contact resistance; Equivalent circuits; Gallium nitride; HEMTs; Inductance; MODFETs; Parasitic capacitance; Voltage; Equivalent circuits; HEMT; Microwave devices;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249954
