DocumentCode
2713619
Title
Modal Analysis of Silicon Photonic Wire and TM-pass Nanowaveguide Polarizer
Author
Wang, Qian ; Ho, Seng Tiong
Author_Institution
Nanophotonics & Photonic-Electron. Integration Group, Data Storage Inst., Singapore
fYear
2008
fDate
8-11 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
Modal analysis of silicon photonic wire is presented based on the full-vectorial eigenmode solution. Numerical results indicate that for different height and width of silicon photonic wire, there are five regions corresponding to different modal characteristics, namely, multimode region, singlemode region, single TE polarization region, single TM polarization region and cutoff region. Simple expressions are correspondingly proposed for the singlemode, single polarization mode and cut off conditions. With this modal analysis, a TM-pass nanowaveguide polarizer based on a tapered silicon nanowaveguide structure is proposed and demonstrated numerically.
Keywords
eigenvalues and eigenfunctions; elemental semiconductors; integrated optics; light polarisation; modal analysis; nanophotonics; optical polarisers; optical waveguide components; silicon; waveguide polarisers; Si; TE polarization; TM polarization; TM-pass nanowaveguide polarizer; full-vectorial eigenmode solution; modal analysis; multimode region; polarization mode; silicon nanowaveguide structure; silicon photonic wire; singlemode region; Arrayed waveguide gratings; Equations; Modal analysis; Optical waveguides; Photonics; Polarization; Refractive index; Silicon; Tellurium; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location
Singapore
Print_ISBN
978-1-4244-3901-0
Electronic_ISBN
978-1-4244-2906-6
Type
conf
DOI
10.1109/IPGC.2008.4781372
Filename
4781372
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