Title :
Low Hydrogen Component SiN Films by PECVD for Low Propagation Loss Waveguide
Author :
Mao, S.C. ; Xu, Y.L. ; Tao, S.H. ; Sun, X.W. ; Yu, M.B. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
A*STAR, Inst. of Microelectron., Singapore
Abstract :
Hydrogen component in SiN films synthesized using plasma enhanced chemical vapor deposition at low temperature (350degC) using silane and nitrogen was studied by Fourier transform infrared spectrum. The effects of the SiH4/N2 flow ratio and the radio frequency power on the hydrogen components of SiN films were investigated. Some sub-micron (400 nm times 700 nm) waveguides were fabricated using corresponding optimal SiN films. The propagation loss is found to be as less as ~-2.12 dB/cm at 1550 nm. The whole waveguide fabrication of process was at low temperature. It is indicated that low hydrogen SiN waveguide preparation method is a promising method in photonics integrated circuits for new generation communications applications.
Keywords :
Fourier transform spectra; infrared spectra; integrated optics; optical fabrication; optical losses; optical materials; optical waveguides; plasma CVD; silicon compounds; thin films; Fourier transform infrared spectrum; PECVD; SiN; photonics integrated circuit; plasma-enhanced chemical vapor deposition; radio frequency power; silicon nitride film hydrogen concentration; submicron waveguide fabrication; temperature 350 degC; waveguide propagation loss; wavelength 1550 nm; Chemical vapor deposition; Fourier transforms; Hydrogen; Nitrogen; Plasma chemistry; Plasma temperature; Plasma waves; Propagation losses; Silicon compounds; Waveguide components;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781373
