Title :
The temperature dependence of electrical properties in N-doped InSb
Author :
Wang, Y. ; Zhang, D.H. ; Liu, W.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.
Keywords :
Hall effect; III-V semiconductors; annealing; carrier density; doping profiles; electrical conductivity; electrical resistivity; indium compounds; ion implantation; nitrogen; phonons; Hall effect measurement; InSb; InSb substrate; InSb:N; annealing temperature; electron carrier concentration; electron conduction; hole conduction; impurity activation energies; nitrogen doping level; nitrogen ion implantation; phonon scattering; resistivity; single band conduction; temperature 180 K to 300 K; Annealing; Charge carrier processes; Doping; Electric variables measurement; Hall effect; Nitrogen; Phonons; Scattering; Temperature dependence; Temperature distribution;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781374
