Title :
Spatial distribution of recombination centers in electron irradiated silicon epitaxial layers
Author :
Daliento, Santolo ; Sanseverino, Annunziata ; Spirito, Paolo ; Zeni, Luigi
Author_Institution :
Dipartimento di Ingegneria Elettronica, Naples Univ., Italy
Abstract :
Taking advantage of a suitable three terminals test structure, we analyze the effects of electron irradiation in silicon epitaxial layers, through the measurement of the recombination lifetime profile. Furthermore, by means of an appropriate temperature scanning we measure the energy levels of the recombination centers induced by the irradiation itself
Keywords :
carrier lifetime; electric variables measurement; electron beam effects; electron-hole recombination; elemental semiconductors; minority carriers; semiconductor device testing; semiconductor epitaxial layers; silicon; Si; Si epitaxial layers; electron irradiated Si; energy levels; recombination centers; recombination lifetime profile; spatial distribution; temperature scanning; three terminals test structure; Electrons; Energy measurement; Life testing; Radiative recombination; Semiconductor device measurement; Semiconductor device testing; Semiconductor diodes; Semiconductor epitaxial layers; Spontaneous emission; Substrates;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535639
