Single oriented carbon nanotubes growth on array of processed microelectrodes

Author

Le Normand, F. ; Cojocaru, C.S. ; Vigolo, B. ; Minoux, E. ; Legagneux, P. ; Kleps, I. ; Craciunoiu, F. ; Angelescu, A. ; Miu, M. ; Simion, M.

Author_Institution

IPCMS, Strasbourg, France

Volume

1

fYear

2004

fDate

4-6 Oct. 2004

Lastpage

100

Abstract

The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new-technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper presents first results of this technology.

Keywords

carbon nanotubes; etching; field effect devices; field emitter arrays; microelectrodes; semiconductor technology; silicon compounds; Si-FEA; SiO₂; carbon nanotube growth; emission efficiency; etching; field emitter array; field-effect devices; field-effect emitter arrays; force microscopy; high-aspect-ratio tips; mask; microelectrodes; scanning tunneling; silicon pyramidal structures; silicon tips; thermal silicon dioxide; Carbon nanotubes; Cathodes; Dielectric substrates; Etching; Fabrication; Magnetic materials; Magnetic properties; Microelectrodes; Nanostructured materials; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1402813

Filename

1402813