Title :
Conductive filaments multiplicity as a variability factor in CBRAM
Author :
Celano, U. ; Goux, L. ; Belmonte, A. ; Opsomer, K. ; Detavernier, C. ; Jurczak, M. ; Vandervorst, W.
Author_Institution :
imec, Heverlee, Belgium
Abstract :
In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to enable the three-dimensional observation of the filaments and correlate the presence of double-branched conductive filaments to the variability in the device performance.
Keywords :
atomic force microscopy; conducting materials; resistive RAM; tomography; C-AFM tomography; CBRAM; conductive bridging memory devices; conductive filament multiplicity; double-branched conductive filaments; low resistive state; resistance variability factor; three-dimensional observation; Aluminum oxide; Electrodes; Performance evaluation; Programming; Resistance; Switches; Tomography; CBRAM; Double-filaments; Resistive switching; scalpel SPM;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112813
