Implementation of Second-order Ku-band Chip Filter on Si Substrate with Commercial 0.18μm CMOS Technology

Author

Chiang, Y.-C. ; Chiu, H.C. ; Hsieh, W.-L.

Author_Institution

Inst. of Electron. Eng., Chang Gung Univ., Tao-Yuan

fYear

2006

fDate

11-16 June 2006

Firstpage

1249

Lastpage

1252

Abstract

This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a pi-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing pi-network filter is proposed. A 17GHz filter chip was fabricated by 0.18mum CMOS technology. The size of filter is 0.56mmtimes0.6mm and the measured pass-band insertion loss of filter is about 3.2dB

Keywords

CMOS analogue integrated circuits; MMIC; band-pass filters; microwave filters; 0.18 micron; 17 GHz; 3.2 dB; CMOS technology; Ku-band band-pass filter; integrated filters; microwave filters; pi-network filter; second order Ku-band chip filter; Band pass filters; CMOS technology; Coupling circuits; Gallium arsenide; Insertion loss; Loss measurement; Magnetic separation; Microwave filters; Resonator filters; Semiconductor device measurement; CMOS; Integrated filters; Microwave filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249437

Filename

4015149