Title :
Time resolved THz-spectroscopy of As-implanted GaAs
Author :
Prabhu, S.S. ; Deshpande, Amey ; Chaubal, Alok U. ; Vengurlekar, A.S.
Author_Institution :
Tata Inst. of Fundamental Res., Mumbai, India
Abstract :
We study the carrier lifetime in As implanted semi-insulating GaAs (SI-GaAs) using various dosages of the As-ion. Using infra-red (IR) pump and THz as a probe, we study the time resolved transmission curves at room temperature and calculate the lifetimes of the carriers in the SI-GaAs:As.
Keywords :
III-V semiconductors; arsenic; carrier lifetime; gallium arsenide; optical pumping; terahertz wave spectra; time resolved spectra; GaAs:As; THz probe; carrier lifetime; infrared pump; temperature 293 K to 298 K; time resolved THz-spectroscopy; time resolved transmission curves; Charge carrier lifetime; Gallium arsenide; Laser beams; Laser excitation; Photonics; Probes;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612684
