• DocumentCode
    2714281
  • Title

    Time resolved THz-spectroscopy of As-implanted GaAs

  • Author

    Prabhu, S.S. ; Deshpande, Amey ; Chaubal, Alok U. ; Vengurlekar, A.S.

  • Author_Institution
    Tata Inst. of Fundamental Res., Mumbai, India
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We study the carrier lifetime in As implanted semi-insulating GaAs (SI-GaAs) using various dosages of the As-ion. Using infra-red (IR) pump and THz as a probe, we study the time resolved transmission curves at room temperature and calculate the lifetimes of the carriers in the SI-GaAs:As.
  • Keywords
    III-V semiconductors; arsenic; carrier lifetime; gallium arsenide; optical pumping; terahertz wave spectra; time resolved spectra; GaAs:As; THz probe; carrier lifetime; infrared pump; temperature 293 K to 298 K; time resolved THz-spectroscopy; time resolved transmission curves; Charge carrier lifetime; Gallium arsenide; Laser beams; Laser excitation; Photonics; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612684
  • Filename
    5612684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2714281