• DocumentCode
    271454
  • Title

    Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT

  • Author

    Foro, L.L. ; Touboul, A.D. ; Michez, A. ; Wrobel, F. ; Rech, P. ; Dilillo, L. ; Frost, Christopher ; Saigné, Frédéric

  • Author_Institution
    IES, Univ. Montpellier II, Montpellier, France
  • Volume
    61
  • Issue
    4
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    1739
  • Lastpage
    1746
  • Abstract
    Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
  • Keywords
    cosmic rays; insulated gate bipolar transistors; neutron effects; radiation hardening (electronics); semiconductor device breakdown; cosmic rays; gate oxide breakdown; insulated gate bipolar transistors; neutron-induced SEB; single event burnout; single event gate rupture; trench gate fieldstop IGBT; Electric breakdown; Failure analysis; Insulated gate bipolar transistors; Logic gates; MOSFET; Neutrons; Substrates; Atmospheric neutrons; Single Event Burnout (SEB); Single Event Gate Rupture (SEGR); cross section; gate oxide breakdown; insulated gate bipolar transistor (IGBT); trench gate fieldstop;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2332813
  • Filename
    6869059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=271454