• DocumentCode
    2714547
  • Title

    Ultra-Broadband GaAs HIFET MMIC PA

  • Author

    Ezzeddine, Amin K. ; Huang, Ho C.

  • Author_Institution
    AMCOM Commun., Inc., Clarksburg, MD
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    1320
  • Lastpage
    1323
  • Abstract
    This paper reports the first MMIC using the HIFET (high-voltage, high-impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB plusmn 1dB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever reported which achieves this combination of instantaneous bandwidth, output power, and efficiency, within a die size of 4 mm2
  • Keywords
    III-V semiconductors; MMIC power amplifiers; field effect integrated circuits; gallium arsenide; microwave field effect transistors; 0.03 to 2.5 GHz; 20 V; GaAs; HIFET MMIC power amplifier; high-impedance FET; ultra-broadband power amplifier; Bandwidth; Broadband amplifiers; FETs; Gallium arsenide; MMICs; Microwave devices; Power amplifiers; Power generation; Radio frequency; Voltage; High-voltage techniques; MMIC power amplifiers; Microwave devices; Microwave power FET amplifiers; Power FETs; Power amplifiers; Power semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249474
  • Filename
    4015167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2714547