Title :
Ultra-Broadband GaAs HIFET MMIC PA
Author :
Ezzeddine, Amin K. ; Huang, Ho C.
Author_Institution :
AMCOM Commun., Inc., Clarksburg, MD
Abstract :
This paper reports the first MMIC using the HIFET (high-voltage, high-impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB plusmn 1dB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever reported which achieves this combination of instantaneous bandwidth, output power, and efficiency, within a die size of 4 mm2
Keywords :
III-V semiconductors; MMIC power amplifiers; field effect integrated circuits; gallium arsenide; microwave field effect transistors; 0.03 to 2.5 GHz; 20 V; GaAs; HIFET MMIC power amplifier; high-impedance FET; ultra-broadband power amplifier; Bandwidth; Broadband amplifiers; FETs; Gallium arsenide; MMICs; Microwave devices; Power amplifiers; Power generation; Radio frequency; Voltage; High-voltage techniques; MMIC power amplifiers; Microwave devices; Microwave power FET amplifiers; Power FETs; Power amplifiers; Power semiconductor devices;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249474
